#PRX, #KSF22005, #IGBT_Module, #IGBT, KSF22005 Power Bipolar Transistor, 50A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, D4, 6 PIN; KS
Manufacturer Part Number: KSF22005Part Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-PUFM-D6Pin Count: 6ECCN Code: EAR99Manufacturer: Powerex Power SemiconductorsRisk Rank: 8.49Collector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 200 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-D6Number of Elements: 1Number of Terminals: 6Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 200 WQualification Status: Not QualifiedRise Time-Max (tr): 1500 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: SOLDER LUGTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICONVCEsat-Max: 2 V Power Bipolar Transistor, 50A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, D4, 6 PIN