#STMicroelectronics, #LET20030C, #IGBT_Module, #IGBT, LET20030C 30W 28V 2GHz LDMOS TRANSISTOR; LET20030C
Manufacturer Part Number: LET20030CBrand Name: STMicroelectronicsPart Life Cycle Code: Not RecommendedIhs Manufacturer: STMICROELECTRONICSPackage Description: FLANGE MOUNT, R-PDFM-F2Pin Count: 2ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 8.31Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VDrain Current-Max (Abs) (ID): 4 ADrain Current-Max (ID): 4 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: L BANDJESD-30 Code: R-PDFM-F2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 65 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime 30W 28V 2GHz LDMOS TRANSISTOR