#HITACHI, #MBM200JS12AW, #IGBT_Module, #IGBT, MBM200JS12AW Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES; MBM200JS12AW
Manufacturer Part Number: MBM200JS12AWPart Life Cycle Code: TransferredIhs Manufacturer: Hitachi LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: Hitachi LtdRisk Rank: 5.12Collector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPower Dissipation-Max (Abs): 1470 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERVCEsat-Max: 3.4 V Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES