#ON Semiconductor, #MBRD660CTRL, #IGBT_Module, #IGBT, MBRD660CTRL 3A, 60V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 369C-01, DPAK-3; MBRD660CTRL
Manufacturer Part Number: MBRD660CTRLRohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPackage Description: R-PSSO-G2Pin Count: 3Manufacturer Package Code: CASE 369C-01ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: ON SemiconductorRisk Rank: 5.16Additional Feature: FREE WHEELING DIODEApplication: POWERCase Connection: CATHODEConfiguration: COMMON CATHODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 0.65 VJESD-30 Code: R-PSSO-G2JESD-609 Code: e0Non-rep Pk Forward Current-Max: 75 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COutput Current-Max: 3 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 240Qualification Status: Not QualifiedRep Pk Reverse Voltage-Max: 60 VSubcategory: Rectifier DiodesSurface Mount: YESTechnology: SCHOTTKYTerminal Finish: Tin/Lead (Sn80Pb20)Terminal Form: GULL WINGTerminal Position: SINGLETime 3A, 60V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 369C-01, DPAK-3