ON Semiconductor MBRD660CTRLG IGBT Module

Manufacturer Part Number: MBRD660CTRLGBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: R-PSSO-G2Pin Count: 3Manufacturer Package Code: 369CECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: ON SemiconductorRisk Rank: 0.78Additional Feature: FREE WHEELING DIODEApplication: FAST RECOVERY POWERBreakdown Voltage-Min: 60 VCase Connection: CATHODEConfiguration: COMMON CATHODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 0.9 VJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Non-rep Pk Forward Current-Max: 75 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 175 °COperating Temperature-Min: -65 °COutput Current-Max: 3 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEQualification Status: Not QualifiedRep Pk Reverse Voltage-Max: 60 VReverse Current-Max: 100 µAReverse Test Voltage: 60 VSurface Mount: YESTechnology: SCHOTTKYTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLE Schottky Power Rectifier, Switch-mode, 6 A, 60 V, DPAK (SINGLE GAUGE) TO-252, 1800-REEL