Toshiba MG150Q2YS1 IGBT Module

#MG150Q2YS1 igbt Description

High power switching Applichations motor control applions

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:200A

Collector current Icp:400A

Collector power dissipation Pc:1250W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3/3 N·m

The MG150Q2YS1 is an Insulated Gate Bipolar Transistor (IGBT) module. Here is a description of the MG150Q2YS1 IGBT:

The MG150Q2YS1 is a high power IGBT module designed for various industrial applications. It is built with advanced IGBT technology, which combines the low on-state voltage drop of a bipolar transistor with the high input impedance and fast switching characteristics of a MOSFET. This combination allows the MG150Q2YS1 to handle high voltage and high current levels while providing efficient power control.

The MG150Q2YS1 features a current rating of 150 Amperes, making it suitable for applications that require high power switching. It has a voltage rating of 1200 Volts, enabling it to handle high voltage levels effectively. The module is designed to operate in a wide temperature range and is capable of withstanding high transient voltage spikes.

Overall, the MG150Q2YS1 IGBT module is a reliable and high-performance device that is commonly used in applications such as motor drives, power supplies, industrial automation, renewable energy systems, and other high-power switching applications.