#TOSHIBA, #MG15G4GM1, #IGBT_Module, #IGBT, MG15G4GM1 TRANSISTOR 15 A, 450 V, 0.4 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-48A1B, 11 PIN, FET General Purpose
Manufacturer Part Number: MG15G4GM1Part Life Cycle Code: ObsoleteIhs Manufacturer: Toshiba CORPPackage Description: FLANGE MOUNT, R-PUFM-D11Pin Count: 11Manufacturer: Toshiba America Electronic ComponentsRisk Rank: 5.82Configuration: COMPLEXDS Breakdown Voltage-Min: 450 VDrain Current-Max (ID): 15 ADrain-source On Resistance-Max: 0.4 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-D11Number of Elements: 4Number of Terminals: 11Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 30 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: SOLDER LUGTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON TRANSISTOR 15 A, 450 V, 0.4 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-48A1B, 11 PIN, FET General Purpose Power