#Toshiba, #MG300Q1US1, #IGBT_Module, #IGBT, MG300Q1US1 1IGBT: 300A1200V; MG300Q1US1
MG300Q1US1 Description MG300Q1US1, V(ces): 1200V V(ges): 20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications MG300Q1US1 1.10 lbs Target_Applications MG300Q1US1 could be used in High Power Switching / Motor Control Applications Features N Channel IGBT (High Power Switching / Motor Control Applications) 1IGBT: 300A1200V