#Toshiba, #MIG50J7CSB1W, #IGBT_Module, #IGBT, MIG50J7CSB1W Insulated Gate Bipolar Transistor 50A I(C) 600V V(BR)CES; MIG50J7CSB1W
Manufacturer Part Number: MIG50J7CSB1W Part Life Cycle Code: Active Ihs Manufacturer: Mitsubishi ELECTRIC CORP Manufacturer: Mitsubishi Electric Risk Rank: 5.73 Collector Current-Max (IC): 50 A Collector-Emitter Voltage-Max: 600 V Number of Elements: 1 Operating Temperature-Max: 100 °C Subcategory: Insulated Gate BIP Transistors VCEsat-Max: 2.2 V Insulated Gate Bipolar Transistor 50A I(C) 600V V(BR)CES