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IXYS MII100-12A3 IGBT Module

#IXYS, #MII100_12A3, #IGBT_Module, #IGBT, MII100-12A3 Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel,; MII100-12A3

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1267
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MII100-12A3 Specification

Sell MII100-12A3, #IXYS #MII100-12A3 Stock, MII100-12A3 Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel,; MII100-12A3, #IGBT_Module, #IGBT, #MII100_12A3
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mii100-12a3.html

Manufacturer Part Number: MII100-12A3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X7ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.26Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 135 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 625 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel,

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