#IXYS, #MII100_12A3, #IGBT_Module, #IGBT, MII100-12A3 Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel,; MII100-12A3
Manufacturer Part Number: MII100-12A3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X7ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.26Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 135 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 625 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel,