#IXYS, #MITA15WB1200TMH, #IGBT_Module, #IGBT, MITA15WB1200TMH Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, MODULE-25; MITA15WB1200TMH
Manufacturer Part Number: MITA15WB1200TMHPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: MODULE-25Pin Count: 25Manufacturer: IXYS CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-P23Number of Elements: 7Number of Terminals: 23Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 120 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: PIN/PEGTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, MODULE-25