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IXYS MIXA151W1200EH New IGBT Module

#IXYS, #MIXA151W1200EH, #IGBT_Module, #IGBT, MIXA151W1200EH Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, MODULE-19; MIXA151W1200EH

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1589
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MIXA151W1200EH Specification

Sell MIXA151W1200EH, #IXYS #MIXA151W1200EH New Stock, MIXA151W1200EH Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, MODULE-19; MIXA151W1200EH, #IGBT_Module, #IGBT, #MIXA151W1200EH
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mixa151w1200eh.html

Manufacturer Part Number: MIXA151W1200EHRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X19Pin Count: 19Manufacturer: IXYS CorporationRisk Rank: 5.73Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 220 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X19Number of Elements: 6Number of Terminals: 19Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 695 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 350 nsTurn-on Time-Nom (ton): 110 nsVCEsat-Max: 2.1 V Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, MODULE-19

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