#IXYS, #MIXA80W1200TED, #IGBT_Module, #IGBT, MIXA80W1200TED Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-28; MIXA80W1200TED
Manufacturer Part Number: MIXA80W1200TEDPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X21Pin Count: 28Manufacturer: IXYS CorporationRisk Rank: 5.65Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 120 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21Number of Elements: 6Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 390 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-28