#IXYS, #MIXA80WB1200TEH, #IGBT_Module, #IGBT, MIXA80WB1200TEH Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; MIXA80WB1200TEH
Manufacturer Part Number: MIXA80WB1200TEHPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X24Pin Count: 35Manufacturer: IXYS CorporationRisk Rank: 5.69Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 120 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X24Number of Elements: 7Number of Terminals: 24Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 390 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, MODULE-35