#ON Semiconductor, #MJD50, #IGBT_Module, #IGBT, MJD50 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE; MJD50
Manufacturer Part Number: MJD50Brand Name: ON SemiconductorPbfree Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer Package Code: 369CECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 5.1Case Connection: COLLECTORCollector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 400 VConfiguration: SINGLEDC Current Gain-Min (hFE): 10JESD-30 Code: R-PSSO-G2JESD-609 Code: e0Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 140 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 240Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 15 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: GULL WINGTerminal Position: SINGLETime 1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE