#ON Semiconductor, #MJE18004D2, #IGBT_Module, #IGBT, MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Effic
Manufacturer Part Number: MJE18004D2Brand Name: ON SemiconductorPbfree Code: End Of LifeIhs Manufacturer: ON SEMICONDUCTORPart Package Code: TO-220ABPackage Description: CASE 221A-09, 3 PINPin Count: 3Manufacturer Package Code: 221A-09ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.26Additional Feature: BUILT-IN EFFICIENT ANTISATURATION NETWORKCase Connection: COLLECTORCollector Current-Max (IC): 5 ACollector-Emitter Voltage-Max: 450 VConfiguration: SINGLE WITH BUILT-IN DIODEDC Current Gain-Min (hFE): 6JEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 240Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 75 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network, TO-220 3 LEAD STANDARD, 50-TUBE