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IXYS MKI100-12F8 New IGBT Module

#IXYS, #MKI100_12F8, #IGBT_Module, #IGBT, MKI100-12F8 Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, MODULE-21; MKI100-12F8

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1950
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MKI100-12F8 Specification

Sell MKI100-12F8, #IXYS #MKI100-12F8 New Stock, MKI100-12F8 Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, MODULE-21; MKI100-12F8, #IGBT_Module, #IGBT, #MKI100_12F8
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mki100-12f8.html

Manufacturer Part Number: MKI100-12F8Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X21Pin Count: 21Manufacturer: IXYS CorporationRisk Rank: 5.66Additional Feature: LOW SATURATION VOLTAGE, FAST SWITCHINGCase Connection: ISOLATEDCollector Current-Max (IC): 125 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X21Number of Elements: 4Number of Terminals: 21Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, MODULE-21

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