#ON Semiconductor, #MMBT5551M3T5G, #IGBT_Module, #IGBT, MMBT5551M3T5G High Voltage NPN Bipolar Transistor, SOT-723 3 LEAD, 8000-REEL; MMBT5551M3T5G
Manufacturer Part Number: MMBT5551M3T5GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-F3Pin Count: 3Manufacturer Package Code: 631AAECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.48Collector Current-Max (IC): 0.06 ACollector-Emitter Voltage-Max: 160 VConfiguration: SINGLEDC Current Gain-Min (hFE): 30JESD-30 Code: R-PDSO-F3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: NPNSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: FLATTerminal Position: DUALTransistor Element Material: SILICON High Voltage NPN Bipolar Transistor, SOT-723 3 LEAD, 8000-REEL