#IXYS, #MMIX1Y100N120C3H1, #IGBT_Module, #IGBT, MMIX1Y100N120C3H1 Insulated Gate Bipolar Transistor, 92A I(C), 1200V V(BR)CES, N-Channel,; MMIX1Y100N120C3H1
Manufacturer Part Number: MMIX1Y100N120C3H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 2.27Collector Current-Max (IC): 92 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 400 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: YES Insulated Gate Bipolar Transistor, 92A I(C), 1200V V(BR)CES, N-Channel,