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ON Semiconductor MMJT350T1,MMJT350T1 pictures,MMJT350T1 supplier,MMJT350T1 stock
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Datasheets:MMJT350T1Product Photos:SOT223-3LPCN Obsolescence:Multiple Devices 06/Oct/2006PCN Design/Specification:Datasheet MSL Updated 2/April/2007Standard Package:1,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - SingleSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNPCurrent - Collector (Ic) (Max):500mAVoltage - Collector Emitter Breakdown (Max):300VVce Saturation (Max) @ Ib, Ic:-Current - Collector Cutoff (Max):-DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10VPower - Max:2.75WFrequency - Transition:-Mounting Type:Surface MountPackage / Case:TO-261-4, TO-261AASupplier Device Package:SOT-223
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Datasheets:MMJT350T1Product Photos:SOT223-3LPCN Obsolescence:Multiple Devices 06/Oct/2006PCN Design/Specification:Datasheet MSL Updated 2/April/2007Standard Package:1,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - SingleSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNPCurrent - Collector (Ic) (Max):500mAVoltage - Collector Emitter Breakdown (Max):300VVce Saturation (Max) @ Ib, Ic:-Current - Collector Cutoff (Max):-DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10VPower - Max:2.75WFrequency - Transition:-Mounting Type:Surface MountPackage / Case:TO-261-4, TO-261AASupplier Device Package:SOT-223
Shunlongwei Inspected every MMJT350T1 before Ship, All MMJT350T1 with 6 months warranty.
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