#ON Semiconductor, #MMUN2113LT3G, #IGBT_Module, #IGBT, MMUN2113LT3G PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL; MMUN2113LT3G
Manufacturer Part Number: MMUN2113LT3GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: SOT-23Package Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3Manufacturer Package Code: 318-08ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 0.94Additional Feature: BUILT-IN BIAS RESISTOR RATIO 1Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLE WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 80JEDEC-95 Code: TO-236ABJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 0.4 WQualification Status: Not QualifiedSubcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL