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ON Semiconductor MMUN2113LT3G,MMUN2113LT3G pictures,MMUN2113LT3G supplier,MMUN2113LT3G stock
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Datasheets:MUN(2,5)113, MMUN2113L, DTA144Exx, NSBA144EF3Product Photos:SOT-23-3_527AGPCN Design/Specification:Gold to Copper Wire 14/Oct/2008Glue Mount Process 11/July/2008Standard Package:10,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):47kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:-Power - Max:246mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:SOT-23-3 (TO-236)
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Datasheets:MUN(2,5)113, MMUN2113L, DTA144Exx, NSBA144EF3Product Photos:SOT-23-3_527AGPCN Design/Specification:Gold to Copper Wire 14/Oct/2008Glue Mount Process 11/July/2008Standard Package:10,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):47kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:-Power - Max:246mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:SOT-23-3 (TO-236)
Shunlongwei Inspected every MMUN2113LT3G before Ship, All MMUN2113LT3G with 6 months warranty.
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