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Rohm Semiconductor MP6K11TCR IGBT Module

#Rohm Semiconductor, #MP6K11TCR, #IGBT_Module, #IGBT, MP6K11TCR Power Field-Effect Transistor, 3.5A I(D), 30V, 0.14ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconduct

· Categories: IGBT Module
· Manufacturer: Rohm Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 866
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MP6K11TCR Specification

Sell MP6K11TCR, #Rohm Semiconductor #MP6K11TCR Stock, MP6K11TCR Power Field-Effect Transistor, 3.5A I(D), 30V, 0.14ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN; MP6K11TCR, #IGBT_Module, #IGBT, #MP6K11TCR
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mp6k11tcr.html

Manufacturer Part Number: MP6K11TCRPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F6Pin Count: 6ECCN Code: EAR99Manufacturer: ROHM SemiconductorRisk Rank: 5.83Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 3.5 ADrain Current-Max (ID): 3.5 ADrain-source On Resistance-Max: 0.14 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F6JESD-609 Code: e2Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 12 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: TIN COPPERTerminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 3.5A I(D), 30V, 0.14ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN

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