#Rohm Semiconductor, #MP6K31TR, #IGBT_Module, #IGBT, MP6K31TR Power Field-Effect Transistor, 2A I(D), 60V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor
Manufacturer Part Number: MP6K31TRPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F6Pin Count: 6ECCN Code: EAR99Manufacturer: ROHM SemiconductorRisk Rank: 5.83Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 2 ADrain Current-Max (ID): 2 ADrain-source On Resistance-Max: 0.35 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F6JESD-609 Code: e2Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 8 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: TIN COPPERTerminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 2A I(D), 60V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN