#M/A-Com Technology Solutions, #MRF171A, #IGBT_Module, #IGBT, MRF171A RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semicondu
Manufacturer Part Number: MRF171APbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: M/A-COM TECHNOLOGY SOLUTIONS INCPackage Description: FLANGE MOUNT, O-CRFM-F4Pin Count: 4Manufacturer Package Code: CASE 211-07ECCN Code: EAR99Manufacturer: MACOMRisk Rank: 1.43Configuration: SINGLEDS Breakdown Voltage-Min: 65 VDrain Current-Max (Abs) (ID): 4.5 ADrain Current-Max (ID): 4.5 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: VERY HIGH FREQUENCY BANDJESD-30 Code: O-CRFM-F4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 115 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: FLATTerminal Position: RADIALTime RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN