#Freescale Semiconductor, #MRF6S20010GNR1, #IGBT_Module, #IGBT, MRF6S20010GNR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA; MRF6S20010GNR1
Manufacturer Part Number: MRF6S20010GNR1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: NXP SEMICONDUCTORSPackage Description: FLANGE MOUNT, R-PDFM-G2ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: NXP SemiconductorsRisk Rank: 0.83Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 68 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: S BANDJEDEC-95 Code: TO-270BAJESD-30 Code: R-PDFM-G2JESD-609 Code: e3Moisture Sensitivity Level: 3Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 225 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA