#Freescale Semiconductor, #MRFE6VP8600HSR5, #IGBT_Module, #IGBT, MRFE6VP8600HSR5 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET; MRFE6VP8600HSR5
Manufacturer Part Number: MRFE6VP8600HSR5Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: NXP SEMICONDUCTORSPackage Description: FLATPACK, R-CDFP-F4ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: NXP SemiconductorsRisk Rank: 1.36Case Connection: SOURCEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 130 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-CDFP-F4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1052 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET