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IXYS MUBW15-12A7 New IGBT Module

#IXYS, #MUBW15_12A7, #IGBT_Module, #IGBT, MUBW15-12A7 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,; MUBW15-12A7

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 187
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MUBW15-12A7 Specification

Sell MUBW15-12A7, #IXYS #MUBW15-12A7 New Stock, MUBW15-12A7 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,; MUBW15-12A7, #IGBT_Module, #IGBT, #MUBW15_12A7
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mubw15-12a7.html

Manufacturer Part Number: MUBW15-12A7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X24Manufacturer: IXYS CorporationRisk Rank: 2.15Additional Feature: LOW SWITCHING LOSS, LOW SATURATION VOLTAGECase Connection: ISOLATEDCollector Current-Max (IC): 35 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X24JESD-609 Code: e3Number of Elements: 7Number of Terminals: 24Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,

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