#IXYS, #MUBW15_12A7, #IGBT_Module, #IGBT, MUBW15-12A7 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,; MUBW15-12A7
Manufacturer Part Number: MUBW15-12A7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X24Manufacturer: IXYS CorporationRisk Rank: 2.15Additional Feature: LOW SWITCHING LOSS, LOW SATURATION VOLTAGECase Connection: ISOLATEDCollector Current-Max (IC): 35 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X24JESD-609 Code: e3Number of Elements: 7Number of Terminals: 24Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,