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Datasheets:MUN5211DW1T1 SeriesProduct Photos:SOT-363 PKGPCN Obsolescence:Multiple Devices 30/Jun/2006Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Arrays, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:2 NPN - Pre-Biased (Dual)Current - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):22kResistor - Emitter Base (R2) (Ohms):22kDC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10VVce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:-Power - Max:250mWMounting Type:Surface MountPackage / Case:6-TSSOP, SC-88, SOT-363Supplier Device Package:SC-88/SC70-6/SOT-363
ON Semiconductor MUN5212DW1T1 New TRANS PREBIAS DUAL NPN SOT363, MUN5212DW1T1 pictures, MUN5212DW1T1 price, MUN5212DW1T1 supplier
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