#GeneSiC Semiconductor, #MUR10060CTR, #IGBT_Module, #IGBT, MUR10060CTR 600V 100A Silicon Super Fast Recovery Rectifier in Twin Tower Package; MUR10060CTR
Manufacturer Part Number: MUR10060CTRPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: GENESIC SEMICONDUCTOR INCPackage Description: R-PUFM-X2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: GeneSic Semiconductor IncRisk Rank: 2.09Application: SUPER FAST RECOVERYCase Connection: ANODEConfiguration: COMMON ANODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.7 VJESD-30 Code: R-PUFM-X2Non-rep Pk Forward Current-Max: 1500 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 50 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDRep Pk Reverse Voltage-Max: 600 VReverse Current-Max: 25 µAReverse Recovery Time-Max: 0.11 µsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime 600V 100A Silicon Super Fast Recovery Rectifier in Twin Tower Package