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GeneSiC Semiconductor MURF10010R IGBT Module

#GeneSiC Semiconductor, #MURF10010R, #IGBT_Module, #IGBT, MURF10010R Rectifier Diode, 1 Phase, 2 Element, 50A, 100V V(RRM), Silicon, TO-244,; MURF10010R

· Categories: IGBT Module
· Manufacturer: GeneSiC Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1497
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MURF10010R Specification

Sell MURF10010R, #GeneSiC Semiconductor #MURF10010R Stock, MURF10010R Rectifier Diode, 1 Phase, 2 Element, 50A, 100V V(RRM), Silicon, TO-244,; MURF10010R, #IGBT_Module, #IGBT, #MURF10010R
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/murf10010r.html

Manufacturer Part Number: MURF10010RPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: GENESIC SEMICONDUCTOR INCPackage Description: R-PUFM-X2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: GeneSic Semiconductor IncRisk Rank: 5.74Application: SUPER FAST RECOVERYCase Connection: ANODEConfiguration: COMMON ANODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1 VJEDEC-95 Code: TO-244JESD-30 Code: R-PUFM-X2Non-rep Pk Forward Current-Max: 1500 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 50 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTRep Pk Reverse Voltage-Max: 100 VReverse Current-Max: 25 µAReverse Recovery Time-Max: 0.075 µsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPER Rectifier Diode, 1 Phase, 2 Element, 50A, 100V V(RRM), Silicon, TO-244,

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