#IXYS, #MWI25_12A7T, #IGBT_Module, #IGBT, MWI25-12A7T Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, E2-PACK, SIXPACK-24; MWI25-12A7T
Manufacturer Part Number: MWI25-12A7TPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X13Pin Count: 24Manufacturer: IXYS CorporationRisk Rank: 5.62Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X13JESD-609 Code: e3Number of Elements: 6Number of Terminals: 13Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 225 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, E2-PACK, SIXPACK-24