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IXYS MWI30-12E6K IGBT Module

#IXYS, #MWI30_12E6K, #IGBT_Module, #IGBT, MWI30-12E6K Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-23; MWI30-12E6K

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1400
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MWI30-12E6K Specification

Sell MWI30-12E6K, #IXYS #MWI30-12E6K Stock, MWI30-12E6K Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-23; MWI30-12E6K, #IGBT_Module, #IGBT, #MWI30_12E6K
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mwi30-12e6k.html

Manufacturer Part Number: MWI30-12E6KRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: SIXPACK-23Pin Count: 23Manufacturer: IXYS CorporationRisk Rank: 5.83Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 29 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X19JESD-609 Code: e3Number of Elements: 6Number of Terminals: 19Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Tin (Sn)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-23

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