#IXYS, #MWI30_12E6K, #IGBT_Module, #IGBT, MWI30-12E6K Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-23; MWI30-12E6K
Manufacturer Part Number: MWI30-12E6KRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: SIXPACK-23Pin Count: 23Manufacturer: IXYS CorporationRisk Rank: 5.83Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 29 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X19JESD-609 Code: e3Number of Elements: 6Number of Terminals: 19Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Tin (Sn)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-23