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IXYS MWI300-12E9 IGBT Module

#IXYS, #MWI300_12E9, #IGBT_Module, #IGBT, MWI300-12E9 Insulated Gate Bipolar Transistor, 530A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-29; MWI300-12E9

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 308
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MWI300-12E9 Specification

Sell MWI300-12E9, #IXYS #MWI300-12E9 Stock, MWI300-12E9 Insulated Gate Bipolar Transistor, 530A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-29; MWI300-12E9, #IGBT_Module, #IGBT, #MWI300_12E9
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mwi300-12e9.html

Manufacturer Part Number: MWI300-12E9Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X17Pin Count: 29Manufacturer: IXYS CorporationRisk Rank: 5.81Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 530 ACollector-Emitter Voltage-Max: 1200 VConfiguration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17JESD-609 Code: e3Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2100 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 530A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-29

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