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IXYS MWI50-12A7 New IGBT Module

#IXYS, #MWI50_12A7, #IGBT_Module, #IGBT, MWI50-12A7 Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-17; MWI50-12A7

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1439
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MWI50-12A7 Specification

Sell MWI50-12A7, #IXYS #MWI50-12A7 New Stock, MWI50-12A7 Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-17; MWI50-12A7, #IGBT_Module, #IGBT, #MWI50_12A7
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mwi50-12a7.html

Manufacturer Part Number: MWI50-12A7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X11Pin Count: 17Manufacturer: IXYS CorporationRisk Rank: 5.63Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 85 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X11JESD-609 Code: e3Number of Elements: 6Number of Terminals: 11Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 350 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-17

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