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IXYS MWI60-12T6K IGBT Module

#IXYS, #MWI60_12T6K, #IGBT_Module, #IGBT, MWI60-12T6K Insulated Gate Bipolar Transistor, 58A I(C), 1200V V(BR)CES, N-Channel, E1-PACK, SIXPACK-24; MWI60-12T6K

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 165
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MWI60-12T6K Specification

Sell MWI60-12T6K, #IXYS #MWI60-12T6K Stock, MWI60-12T6K Insulated Gate Bipolar Transistor, 58A I(C), 1200V V(BR)CES, N-Channel, E1-PACK, SIXPACK-24; MWI60-12T6K, #IGBT_Module, #IGBT, #MWI60_12T6K
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mwi60-12t6k.html

Manufacturer Part Number: MWI60-12T6KPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X13Pin Count: 24Manufacturer: IXYS CorporationRisk Rank: 5.71Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 58 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X13Number of Elements: 6Number of Terminals: 13Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 200 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 58A I(C), 1200V V(BR)CES, N-Channel, E1-PACK, SIXPACK-24

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