ON Semiconductor NJD35N04T4G IGBT Module

Manufacturer Part Number: NJD35N04T4GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer Package Code: 369CECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.45Case Connection: COLLECTORCollector Current-Max (IC): 4 ACollector-Emitter Voltage-Max: 350 VConfiguration: DARLINGTON WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 300JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 45 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime 4.0 A, 350 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL