ON Semiconductor NTMD5836NLR2G IGBT Module

Manufacturer Part Number: NTMD5836NLR2GBrand Name: ON SemiconductorPbfree Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8Manufacturer Package Code: 751-07ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 7.82Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 9 ADrain Current-Max (ID): 5.7 ADrain-source On Resistance-Max: 0.0308 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1.5 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Power MOSFET 40V 9A 12 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL