#STMicroelectronics, #PD57006_E, #IGBT_Module, #IGBT, PD57006-E 6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package; PD57006-E
Manufacturer Part Number: PD57006-EBrand Name: STMicroelectronicsPart Life Cycle Code: Not RecommendedIhs Manufacturer: STMICROELECTRONICSPart Package Code: SOTPackage Description: ROHS COMPLIANT, PLASTIC, POWERSO-10RF, SMD, 2 PINPin Count: 10ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 8.19Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VDrain Current-Max (Abs) (ID): 1 ADrain Current-Max (ID): 1 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 3Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 250Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 20 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn) - annealedTerminal Form: GULL WINGTerminal Position: DUALTime 6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package