#STMicroelectronics, #PD85025STR_E, #IGBT_Module, #IGBT, PD85025STR-E 25W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package; PD85025STR-E
Manufacturer Part Number: PD85025STR-EBrand Name: STMicroelectronicsRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: STMICROELECTRONICSPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-F2Pin Count: 10ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 5.6Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 7 ADrain Current-Max (ID): 7 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDSO-F2JESD-609 Code: e3Moisture Sensitivity Level: 3Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 165 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 79 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime 25W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package