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NIEC PDMB300B12 IGBT Module

#NIEC, #PDMB300B12, #IGBT_Module, #IGBT, PDMB300B12 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$ 56
· Date Code: 2018+
. Available Qty: 110
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PDMB300B12 Specification

Sell PDMB300B12, #NIEC #PDMB300B12 Stock, PDMB300B12 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7, #IGBT_Module, #IGBT, #PDMB300B12
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Manufacturer Part Number: PDMB300B12

Part Life Cycle Code: Active

Ihs Manufacturer: KYOCERA CORP

Package Description: FLANGE MOUNT, R-XUFM-X7

Manufacturer: KYOCERA Corporation

Risk Rank: 5.16

Case Connection: ISOLATED

Collector Current-Max (IC): 300 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X7

Number of Elements: 2

Number of Terminals: 7

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 1600 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 800 ns

Turn-on Time-Nom (ton): 400 ns

VCEsat-Max: 2.4 V

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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