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NXP Semiconductors PDTA115EMB315,PDTA115EMB315 pictures,PDTA115EMB315 supplier,PDTA115EMB315 stock
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Product Photos:SC-101 SOT-883Standard Package:10,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):20mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):100kResistor - Emitter Base (R2) (Ohms):100kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 5VVce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mACurrent - Collector Cutoff (Max):1µAFrequency - Transition:180MHzPower - Max:250mWMounting Type:Surface MountPackage / Case:3-XFDFNSupplier Device Package:3-DFN1006B (0.6x1)Other Names:934065934315
Sell NXP Semiconductors PDTA115EMB,315 New Stock, PDTA115EMB,315 pictures, PDTA115EMB,315 price, PDTA115EMB,315 supplier
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Product Photos:SC-101 SOT-883Standard Package:10,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):20mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):100kResistor - Emitter Base (R2) (Ohms):100kDC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 5VVce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mACurrent - Collector Cutoff (Max):1µAFrequency - Transition:180MHzPower - Max:250mWMounting Type:Surface MountPackage / Case:3-XFDFNSupplier Device Package:3-DFN1006B (0.6x1)Other Names:934065934315
Shunlongwei Inspected every PDTA115EMB,315 before Ship, All PDTA115EMB,315 with 6 months warranty.
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