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NXP Semiconductors PDTA143ZE115,PDTA143ZE115 pictures,PDTA143ZE115 supplier,PDTA143ZE115 stock
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Datasheets:PDTA143ZProduct Photos:EMT3Catalog Drawings:SOT-416 Package TopPDTA1xxxE Series CircuitStandard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5VVce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mACurrent - Collector Cutoff (Max):1µAFrequency - Transition:-Power - Max:150mWMounting Type:Surface MountPackage / Case:SC-75, SOT-416Supplier Device Package:SC-75Other Names:568-2130-2934057868115PDTA143ZE T/R
Sell NXP Semiconductors PDTA143ZE,115 New Stock, PDTA143ZE,115 pictures, PDTA143ZE,115 price, PDTA143ZE,115 supplier
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Datasheets:PDTA143ZProduct Photos:EMT3Catalog Drawings:SOT-416 Package TopPDTA1xxxE Series CircuitStandard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):47kDC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5VVce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mACurrent - Collector Cutoff (Max):1µAFrequency - Transition:-Power - Max:150mWMounting Type:Surface MountPackage / Case:SC-75, SOT-416Supplier Device Package:SC-75Other Names:568-2130-2934057868115PDTA143ZE T/R
Shunlongwei Inspected every PDTA143ZE,115 before Ship, All PDTA143ZE,115 with 6 months warranty.
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