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NXP Semiconductors PDTD113ET215,PDTD113ET215 pictures,PDTD113ET215 supplier,PDTD113ET215 stock
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Datasheets:PDTD113E SeriesProduct Photos:SOT-23-3Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):500mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):1kResistor - Emitter Base (R2) (Ohms):1kDC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:-Power - Max:250mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:SOT-23-3Other Names:934058975215PDTD113ET T/RPDTD113ET T/R-ND
Sell NXP Semiconductors PDTD113ET,215 New Stock, PDTD113ET,215 pictures, PDTD113ET,215 price, PDTD113ET,215 supplier
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Datasheets:PDTD113E SeriesProduct Photos:SOT-23-3Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):500mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):1kResistor - Emitter Base (R2) (Ohms):1kDC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:-Power - Max:250mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:SOT-23-3Other Names:934058975215PDTD113ET T/RPDTD113ET T/R-ND
Shunlongwei Inspected every PDTD113ET,215 before Ship, All PDTD113ET,215 with 6 months warranty.
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