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NIEC PRHMB150A6A New IGBT Module

#NIEC, #PRHMB150A6A, #IGBT_Module, #IGBT, PRHMB150A6A Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-5; PRHMB150A6A

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$
· Date Code: 11+
. Available Qty: 14
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PRHMB150A6A Specification

Sell PRHMB150A6A, #NIEC #PRHMB150A6A New Stock, PRHMB150A6A Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-5; PRHMB150A6A, #IGBT_Module, #IGBT, #PRHMB150A6A
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Manufacturer Part Number: PRHMB150A6APart Life Cycle Code: ObsoleteIhs Manufacturer: NIHON INTER electronicS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X5Pin Count: 5Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 560 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 450 nsTurn-on Time-Nom (ton): 250 nsVCEsat-Max: 2.6 V Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-5

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