#NIEC, #PTMB75A6C, #IGBT_Module, #IGBT, PTMB75A6C Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel; PTMB75A6C
Manufacturer Part Number: PTMB75A6CPart Life Cycle Code: ObsoleteIhs Manufacturer: NIHON INTER electronicS CORPPackage Description: FLANGE MOUNT, R-XUFM-X39Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X39Number of Elements: 6Number of Terminals: 39Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 450 nsTurn-on Time-Nom (ton): 250 ns Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel