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Mitsubishi QM300HA-2H New IGBT Module

#Mitsubishi, #QM300HA_2H, #IGBT_Module, #IGBT, QM300HA-2H Mitsubishi IGBT 300A/1000V/GTR/1U ;

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$
· Date Code: 2022+
. Available Qty: 453
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QM300HA-2H Specification

Sell QM300HA-2H, #Mitsubishi #QM300HA-2H New Stock, QM300HA-2H Mitsubishi IGBT 300A/1000V/GTR/1U ;, #IGBT_Module, #IGBT, #QM300HA_2H
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Mitsubishi QM300HA-2H is a high-power, high-voltage insulated gate bipolar transistor (IGBT) module designed for use in power electronics applications such as motor drives, welding equipment, and uninterruptible power supplies (UPS).

This module( QM300HA-2H) is capable of handling maximum collector current 300A & collector-emitter voltage 1.2kV, suitable for high-power applications. It features low on-state voltage, high switching speed, and low switching losses, works in high efficiency and improved performance.

The QM300HA-2H module includes a built-in temperature sensor, which provides feedback to the system controller for accurate temperature monitoring and control. The module is also equipped with a protection circuit that safeguards against overcurrent, overvoltage, & overheating.

QM300HA-2H Features

.All the terminals and the mounting plate are electrically isolated. These modules can be installed in the same cooling fin as other modules,thus saving installation space a cost-effective feature.

.The diode chips are coated with a glass of zinc oxide,making them highly resistant to temperature and humidity variation.

. Two diodes chips are connected in series internally, so allowing the rectifying circuit to be simplified.

Applications

. Inverters for AC motors

. Power supply units for DC motors

. DC Power supply units for battery chargers

. General purpose DC power supply units

• IC Collector current ........................ 300A

• VCEX Collector-emitter voltage ......... 1000V

• hFE DC current gain............................... 75

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Junction Temperature Tj 150 °C

Storage Temperature Tstg -40 to 125 °C

Collector-Emitter Voltage (G-E SHORT) VCES 250 Volts

Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts

Collector Current (Tc = 25°C) IC 300 Amperes

Maximum Collector Dissipation (Tc = 25°C) Pc 1980 Watts

Weight 460 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts

Mounting screw torque 1.96~2.94 N·m

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