#Mitsubishi, #QM30TB1_H, #IGBT_Module, #IGBT, QM30TB1-H Mitsubishi IGBT POWER TRANSISTOR MODULE ;
Options .also available with powerfull chopper. For characteristics please refer to Inverter IGBT 1)Theatsink=25°C, unless otherwise specified 2)CAL=Controlled Axial Lifetime Technology(soft and fast recovery) .For diagrams of the Chopper IGBT please fefer to QM30TB1-H Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1000V Gate-Emitter voltage VGES:±20V Collector current Ic:50A Collector power dissipation Pc:400W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C Mitsubishi IGBT POWER TRANSISTOR MODULE