Rohm Semiconductor QS8M12TCR IGBT Module

Manufacturer Part Number: QS8M12TCRPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F8Pin Count: 8ECCN Code: EAR99Manufacturer: Rohm SemiconductorRisk Rank: 5.82Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 4 ADrain Current-Max (ID): 4 ADrain-source On Resistance-Max: 0.063 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F8JESD-609 Code: e2Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNEL AND P-CHANNELPower Dissipation-Max (Abs): 1.5 WPulsed Drain Current-Max (IDM): 12 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: TIN COPPERTerminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 4A I(D), 30V, 0.063ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN