#Rohm Semiconductor, #RRH040P03TB1, #IGBT_Module, #IGBT, RRH040P03TB1 Power Field-Effect Transistor, 4A I(D), 30V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semicondu
Manufacturer Part Number: RRH040P03TB1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-G8ECCN Code: EAR99Manufacturer: ROHM SemiconductorRisk Rank: 1.72Avalanche Energy Rating (Eas): 0.1 mJConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 4 ADrain-source On Resistance-Max: 0.075 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPulsed Drain Current-Max (IDM): 16 ASurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 4A I(D), 30V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8