#Rohm Semiconductor, #RT1A040ZPTR, #IGBT_Module, #IGBT, RT1A040ZPTR Power Field-Effect Transistor, 4A I(D), 12V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconduct
Manufacturer Part Number: RT1A040ZPTRPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F8Pin Count: 8ECCN Code: EAR99Manufacturer: Rohm SemiconductorRisk Rank: 8.03Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 12 VDrain Current-Max (Abs) (ID): 4 ADrain Current-Max (ID): 4 ADrain-source On Resistance-Max: 0.03 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F8JESD-609 Code: e2Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 1.25 WPulsed Drain Current-Max (IDM): 16 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: TIN COPPERTerminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 4A I(D), 12V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSST8, 8 PIN